Reverse recovery time

• Denoted by trr.
• In FB condition, large number of electrons from n-type progressing through p-type
and large number of holes in p-type is a requirement for conduction. The electrons in
p-type and holes progressing through n-type establish a large number of minority
carriers in each material.
• Now if the diode is changed from FB to RB
• The diode will not instantaneously react to this sudden change. Because of the large
number of minority carriers in each material, the current sustains in diode for a time ts
storage time which is required for minority carriers to return to their majority carrier
state in the opposite material.
• Eventually current will reduce to non conduction levels.
• This time is tt transition interval
• Hence trr= ts + tt
• This is very important consideration in high frequency operation.
• Commercially available diodes have reverse recovery time of few nano seconds to

1micro second.

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